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Items relevant to "A 2kW 24VDC To 240VAC Sinewave Inverter; Pt.3":
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A 2kW 24V/240VAC
sinewave inverter; Pt.3
In this third article on the 2kW inverter, we
present the H-pack output drive circuit which
converts the 365V DC rail into 240VAC. We also
describe the pulse drive circuit which enables
the H-pack to produce a sinewave output.
By JOHN CLARKE
Last month, we described the heavy
duty DC-to-DC converter circuitry
which steps up 24V DC to 365V DC
and we emphasised the design problems in handling currents in excess of
100 amps. But having obtained the
high DC voltage, it must be converted
to a 50Hz 240VAC sinewave and this
presented more onerous problems
66
S1LJCON CHIP
than the DC-DC conversion.
Our initial approach to this part of
the circuit was to use heavy duty
Mosfets but this proved to be a dismal
failure. These devices just could not
do the job and so we turned to a
hybrid device, the insulated gate bipolar transistor. These devices are
available in higher current and volt-
age ratings than Mosfets and enable
us to design a H-pack output drive
circuit which requires just four devices.
This means that there is no need for
paralleled devices and hence problems of uneven current sharing are
eliminated.
The circuit for the H-pack drive is
show:n in Fig.10. This uses eight ICs
(IC6-IC13), three transformers, four
insulated gate bipolar transistors
(IGBTs), four soft recovery diodes and
associated passive components.
Before we dive into the circuit description, let's just refresh our memory
on the overall concept of this sinewave inverter. This is best done by
referring to the block diagram ofFig.3
MOSFET
DRIVERS
i ANO
CONTROLLER
+
24V
BATTERY
STEP-UP
TRANSFORMER
x18
HIGH VOLTAGE
FULLWAVE
RECTIFIER
HIG~ VOLTAGE
LTER
CAPACITOR
+365V
ISOLATED
VOLTAGE
FEEDBACK
A
A
SWITCH
1
SWITCH
2
8
8
L2
SWITCHMODE
SINEWAVE
GENERATOR
X
C
-c
D
SWITCH
3
D
SWITCH
4
DV
Fig.3: repeated from the first article, this block diagram illustrates
the basic arrangement of the sinewave generator & H-pack output
drive circuits for the 2kW inverter. Switches 1-4 are equivalent to
the insulated gate bipolar transistors (Q17-Q20) shown in Fig.10.
which we have reproduced from the
first article.
We won't go through the description of the block diagram again other
than to point out that the H-pack circuit consists of semiconductor
switches 1-4. These are fed with pulse
signals from the switchmode sinewave generator which allow the circuit to produce a 50Hz sinewave, after suitable filtering.
Switches 1-4 in Fig.3 are the insulated gate bipolar transistors we have
already referred to. Switch 1 is Ql 7
on Fig.10, switch 2 is Q18, switch 3 is
Q19 and switch 4 is QZ0. These IGBTs
are Siemens BUP304 devices which
have a collector-emitter voltage rating
of 1000V and a continuous collector
current rating of 35A. They can be
pulsed at currents of up to 50A and
because they have insulated gates,
they can be driven in the same manner as Mosfets.
Hence, each IGBT gate is driven by
six paralleled 4049 CMOS inverters.
So Q17 is driven by IC7, Q18 by IC9,
Q19 by IC11 and QZ0 by IC13. The
paralleled inverter outputs provide
sufficient drive to charge and discharge the Z000pE gate capacitance
which must be done to switch the
IGBTs on and off. Zener diodes ZD8,
ZD10, ZD12 and ZD13 protect the
gates of the IGBTs against overdrive.
Each 4049 hex inverter IC is driven
by a fast optocoupler with an isolation rating of 5300V and a switching
response time of about 0.5µs.
The LED in each optocoupler is
driven by the switching sinewave generator circuit yet to be described.
When the LED is turned on, the transistor in the optocoupler turns on and
pulls the inverter inputs low. This
pulls the respective IGBT gate high
and-turns it on. Conversely, when the
LED is off, the IGBT is off.
Isolated supply lines
Turning the IGBTs on and off requires a lot more than just having a
paralleled hex buffer to drive each
gate, however. For the two top transistors in the H-pack (Ql 7 and Q18),
each 4049 buffer requires its own isolated 15V supply. Similarly, for the
other two transistors in the H-pack,
the 4049s require a common but still
isolated 15V supply. There are several reasons why the 15V supply used
for the drive circuitry in the DC-to-DC
inverter cannot be used.
The first reason is that the 0V line
of the 365V supply cannot be tied to
the 0V line from the 24V battery. This
MAINS
GPO
is necessary because both the . high
voltage DC and the 240VAC output
must be completely isolated from the
battery input circuits. This is done for
safety reasons and also to prevent any
feedback process which might upset
the circuit operation.
For the top two transistors in the Hpack, there are much more compelling reasons for having the isolated
supply lines for the buffers. When
Ql 7 or Q18 turns on, its collectoremitter voltage drops to a very low
value and so its emitter jumps to almost +365V. So when Ql 7 turns on,
its emitter jumps to +365V and so
does the rest of the circuitry tied to
that emitter. Hence, pin 8 of IC7 and
pin 5 of IC8 is also pulled to +365V.
The sµme process also applies to
Q18, IC9 and IC8. This means that
three isolated 15V supplies are mandatory for the circuit to work.
The isolated supply lines are provided by three small transformers : TZ,
T3 and T4. These are driven by a
common high-frequency driver circuit
which operates at about 1MHz. We'll
describe how this works later in the
article.
The secondary outputs of TZ, T3
and T4 are rectified using small signal diodes D7, D8 and D9 and the DC
DECEMBER 1992
67
+365VO-------------------------------------+---------D7
1N4148
4.7k
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SFH6136
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8
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D10
BYP102
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~~~ J
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(1)
X
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1N4148
(3)
4.7k
1010
SFH8138
ZD11
15V
1W
1 +
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8
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8
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S14K275
019
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A
5
ZD12
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HIGH VOLTAGE SWITCHES AND FILTER
is smoothed with a lOµF capacitor.
The supplies are each regulated using
a series resistor and a 15V zener diode
(ZD7, ZD9 and ZD11 respectively),
and are each bypassed with a lµF
capacitor.
While these three transformers are
very small, the 1MHz operating frequency means that they are very efficient and quite adequate for supply68
SJLICON CHIP
ing the gate current requirements of
the IGBTs.
IGBT voltage protection
You might think that because the
IGBTs have a 1000V rating, they would
be rugged enough to withstand anything that the circuit could throw at
them. Unfortunately, that is not true
and they do require protection both
for themselves and their insulating
washers.
Since these IGBTs do not have internal reverse diodes, as do power
Mosfets, we have connected a BYP102
fast recovery diode across each one.
These are D10, D11, D12 and D13.
When each IGBT is switched off, its
inductive load generates a very sharp
voltage transient which raises the
D8
1N4148
+365V
4.7k
E
IC8
SFH6136
ZD9
15V
1W
LL -
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BUP304
D11
BYP102
6
J
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C
SIOVS
S14K275
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(2)
0.75mH
10A
L3
0.75mH
10A
L4
y
FS
10A
15A Elli FILTER
DELTA 10DRCG5
GPO
OUTPUT
240V
SOHz SINE
+385V
CHASSIS
(4)
4.7k
IC12
SFH6136
1 +
S00VAC-
SIOV7
S14K275
1 +
50VW
LL
020
BUP304
K
D13
BYP102
).
A
ZD13
18V
1W
II
emitter above the collector in the case
of Ql 7 and Q18, or pulls the collector
negative with respective to the emitter in the case of Ql 9 and Q20. During
switch-off, the diodes conduct and
clamp the emitter of each IGBT to its
collector and hence prevent reverse
voltage punch-through.
The BYP102 diodes are rated at
lO00PIV and 50A peak, and have a
SIOVI
S14K275
J
N
response time of 130ns.
Even with diode clamping, the large
voltage transients produced at the instant the IGBTs switch off can cause
breakdown of the insulating washers.
This problem has been controlled in
two ways. First, a lµF 500VAC capacitor is connected across the 365V
supply rail close to the IGBTs. This
effectively counteracts much of the
Fig.10: the H-pack output drive circuit
is based on insulated gate bipolar
transistors Q17-Q20. These in turn are
driven by a sinewave generator
circuit (see Fig.11) via optocouplers
IC6, IC8, ICtO & IC12 & hex buffer
stages IC7, IC9, IC11 & 1Ct3. The
optocouplers serve to isolate the highvoltage output stage from the 24V DC
supply. Transformers T2-T4 & diodes
D7-D9 provide isolated DC supply
rails for the optocouplers & 4049 hex
buffers
DECEMBER
1992
69
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supply lead inductance which causes
the sudden voltage transient.
Second, we have connected Metal
Oxide Varistors (MOVs) across each
IGBT to clamp the voltage to an acceptable level. Each IGBT has two
SIOV S14K275 varistors in series,
which effectively gives voltage clamping at about 780V. The H1 resistor in
series with each pair of MOVs limits
the breakdown current through the
varistors to a safe value.
Output filter
The difference between the pulse
◄
Fig.11 (left): the sinewave generator
circuit uses crystal oscillator stage
IC17a to drive cascaded 4-bit binary
counters IC18-IC21. These in turn
drive the address inputs ofIC23, an
OTPROM which contains the
sinewave code. Its outputs, at D5 &
D6, then produce pulse signals to
drive the optocouplers in the
H-pack output stage via transistors
Q21-Q24. IC14 & its associated
inverter stages provide the low
voltage drive to transformers T2-T4.
This close-up view shows the H-pack drive circuitry for the inverter, with the
outputs from the sinewave generator circuit at bottom right. The four switching
transistors (IGBTs) are bolted to the chassis on either side of the board, along
with their BYP102 protection diodes.
width modulated waveform at point
X (ie, the junction of Q17 and Q19)
and the PWM waveform at point Y
(the junction of Q18 and Q20) becomes the output waveform after filtering. This filtering is provided by
inductors L3 and L4 and the 25µF
3 70VAC capacitor connected between
points X and Y. While the switching
rate of the IGBTs is 4kHz, the filter
cutoff frequency is set to about 820Hz
to produce a smooth sinewave as depicted in the photographs published
last month.
However, this filtering is not sufficient to avoid interference to radio
and TV reception. Hence, further filtering is provided by a commercial
EMI filter rated for load currents of up
to 10 amps.
Sinewave generator
That concludes the description of
H-pack circuit ofFig.10. We now need
to refer to the diagram ofFig.11 which
shows the sinewave generator and
high frequency transformer drivers.
The latter provide the isolated 15V
supplies via transformers T2, T3 and
T4 .
The transformer driver circuitry
comprises IC14, IC15 and IC16. IC14
is a CMOS 555 timer which is connected to produce a square wave with
a duty cycle of 50%. Unlike the usual
555 circuit configuration, the output
at pin 3 charges and discharges the
220pF capacitor at pin 2 and pin 6 via
a 2.2kQ resistor.
At switch-on, pin 3 is high and the
220pF capacitor charges via the 2.2kQ
resistor until the voltage across it
reaches 66% of the 15V supply. Pin 3
then switches low and discharges the
220pF capacitor via the 2.2kQ resistor
until thEp voltage reaches 33% of the
15V supply. This causes pin 3 to again
go high and so the cycle repeats. The
frequency of the square wave at pin 3
is about 1MHz.
The output of IC14 is buffered by
IC15a, a 4049 inverter. This in turn
drives inverters IC15b, IC15c and
IC16a. IC15b and IC15c are connected
DECEMBER
1992
71
The sinewave generator board carries the low-voltage transformer drive
circuitry & the NMC27C64N OTPROM. This board is mounted on the bottom of
the case & its outputs connected to the H-pack output board via flying leads.
in parallel to drive IC15d, IC15e and
IC15f.
IC16a drives paralleled inverters
IC16b and IC16c which in turn drive
IC16d, IC16e and IC16f. The buffered
outputs from these stages then drive
the primary windings of transformers
T2, T3 and T4 on the H-pack output
PC board.
.
The circuitry for the sinewave generator includes four 4-bit synchronous
counters (IC18-IC21), an BK x 8 OTPROM (see below), a 4049 hex inverter
(IC17), a quad 2-input AND gate (IC22)
and four transistors (Q21-Q24).
CMOS inverter IC17a is connected
as a crystal oscillator operating at
3.2768MHz. Its output signal appears
at pin 8 and is applied to the clock
input (pin 5) of binary counter IC18.
The four binary counters (IC18IC21) are cascaded together to divide
the 3.2768MHz signal. These counters
are synchronous types which means
that their outputs at QA, QB, QC and
QD all change together with the clock
input.
IC23 is an BK x 8 One Time Programmable Read Only Memory
(OTPROM). The only practical difference between an OTPROM and an
EPROM is that an OTPROM can only
be programmed once while an EPROM
72
SILICON CHIP
can usually be programmed and erased many times. Since the OTPROM
does not have a window in the package, it is quite a bit cheaper.
IC23 contains the code for one half
of a complete sinewave. It has 13 address lines and these are driven by
the Q outputs of the binary counters.
Two of its data lines, D5 and D6 at
pins 16 and 17, then produce the necessary pulse signals to drive the Hpack output stages.
Since the frequency fed to the AO
input is 409.6kHz (3.2768MHz divided by 8), the frequency fed to the A12
input is 100Hz (409.6kHz divided by
4096) and this provides exactly half
the period for a 50Hz sinewave.
Because IC23 counts up from 0
when all its address inputs are low (0)
to 8192 when all its address inputs
are high (1), the OTPROM produces a
high and low signal sequence at its
D5 and D6 outputs.
IC17b inverts the QA output ofIC18
and drives the G-bar input to IC23,
pin 22. When the G-bar input is low,
the data outputs (D5 and D6) of IC23
have a low impedance. Conversely,
when the G-bar input is high, the data
outputs are in a high impedance state.
When the address lines of IC23
change to the next count, there is a
short time when the data outputs are
invalid since the OTPROM has a finite
access time of 250ns. To cope with
this problem, the G-bar input is held
high (QA ofIC18 is low) and the data
outputs are in a high impedance state
for 305ns between each valid code.
It may appear to be bad design to
have the data outputs at D5 and D6 in
a high impedance state for this brief
time interval. After all, these outputs
are driving the CMOS inputs of quad
AND gate IC22. In practice though, it
is not a problem since the input capacitance of the AND gates acts to
maintain the last valid code. When
the data outputs return to their low
impedance state, they drive the CMOS
inputs in the normal way.
AND gates IC22a and IC22d each
have one input connected to the QD
output of counter IC21. This output is
also inverted by IC17e to drive one
input of AND gates IC22c and IC22b.
Since QD is a 50Hz square wave, it is
high for 10ms and low for 10ms. Thus,
QD effectively controls the AND gate
package and determines which of the
four driver transistors (Q21-Q24) receive the switching signal from the
OTPROM.
IC22a drives transistor Q23 which
drives optocoupler IC10 and transistor Q19 on the H-pack board. Similarly, IC22b drives transistor Q24 and
this in turn drives optocoupler IC12
and Q20.
The D6 output of IC23 therefore
controls the lower switches of the Hpack. Similarly, the D5 output ofIC23
controls the upper switches of the Hpack.
These separate outputs allow dead
time to be included in the sinewave
generation coding between opposing
switches. For example there is dead
time between the '1' switch turning
off and the '3' switch turning on.
Power supply
Power for the circuit is derived via
REG2 which regulates the 24V supply
to provide a +5V rail. The series 150Q
resistor limits the current through
ZD14 which is included to protect the
input of the regulator. The 10µF capacitors at the input and output of
REG2 provide supply decoupling.
That concludes the circuit description of the 24V/240VAC sinewave inverter. Next month, we will describe
the construction of the DC-to-DC converter board.
SC
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