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SemTest
Pt.2: By JIM ROWE
Check all those semiconductors in your collection
with this easy-to-build test set!
This month we present the full circuit of this versatile unit which
can test all those semiconductors in your collection. It employs
a PIC16F877A microcontroller to run all the different tests and
displays the results on the 2-line LCD panel.
T
HERE’S QUITE A LOT of circuitry
in the new SemTest, despite the
fact that most of its operation is managed by a microcontroller. For that
reason, the circuitry is accommodated
on two PCBs which are stacked inside
the case.
To begin the circuit description we
will start with the lower or main PCB
which carries the micro, the power
supplies and metering. This section
of the circuit is shown in Fig.5.
Microcontroller IC4 forms the brain
of the SemTest. We have used a PIC70 Silicon Chip
16F877A because it has five I/O ports,
including three that are eight bits wide.
It also includes a 10-bit A-D (analogto-digital) converter with a choice of
eight input channels.
All eight bits of both ports B and D
are used to control the various relays
which provide the test configurations.
The two ports drive IC5 and IC6, which
are ULN2803A octal Darlington arrays
which in turn drive a total of 16 relays.
Most of these are on the upper PCB
but four relays are on the main board:
• Relay 1, which is used to switch the
device test voltage on and off;
• Relay 2, which switches the test voltage between its “BV” or “OPV” modes;
• Relay 7, which controls the value
of the current shunt resistor used to
measure device current (and hence
switch current ranges); and
• Relay 8, which controls the voltage divider ratio for device voltage
measurement (ie, to switch voltage
measurement ranges).
The connections to the relays on
the upper PCB are made via CON3
and CON4.
siliconchip.com.au
Bit lines RC0-RC3 of port C, together
with RE0 and RE1 of port E, are used
to control the LCD module, which is
again on the upper PCB. These connections are made via CON2, which
links to CON5 on the upper board via
a 10-way IDC ribbon cable.
The remaining bit lines RC4-RC7 of
port C plus bit line RE2 of port E are
used to monitor activity on the five
pushbutton switches S3-S7. These
mount on the instrument’s front panel
and are connected using a 16-way IDC
ribbon cable from CON7 on the upper
PCB to CON4 on the main board.
The same connectors and cable
are used to make the connections for
relays 3-6, 9, 15 & 16, plus the connection for LED1 (the “Test Volts Present”
indicator).
High-voltage supply
The test voltage power supply circuitry at upper left on Fig.5 has been
adapted from the high-voltage power
supply in the Electrolytic Capacitor
Tester/Reformer described in AugustSeptember 2010.
As before, the supply is a stepup DC-DC converter using IC1 (an
MC34063) as the controller, with transistors Q1 & Q2 used to drive Mosfet
Q3 and transformer T1. The “flyback”
voltage pulses developed by T1 are
rectified by fast diode D2 and fed to the
output filtering and current limiting
circuitry. The MC34063 maintains the
output voltage at the selected level by
means of negative feedback from the
four 75kΩ resistors in series with trimpot VR1 in the top leg, plus the 100kΩ
resistor connected from pin 5 of IC1
to ground as the “default” bottom leg.
This basic divider determines the
converter’s nominal “10V” output
level.
The three other operating test voltages (25V, 50V & 100V) are achieved
using switch S2a to bring other resistances in parallel with the 100kΩ
lower resistor, while relay 2(a) is used
to achieve the converter’s much higher
(about 600V) “BV” output voltage by
switching in a 680Ω resistor across the
100kΩ resistor instead.
Trimpot VR1 is used to set the converter’s OPV output voltages precisely.
Bit lines RA4 and RA5 of the micro’s
port A are used to sense the setting of
switch S2, ie, via poles S2b and S2c.
While we’re looking at the DC-DC
converter circuitry, note that the
second pole of relay 2 (2b) is used
siliconchip.com.au
Features & Specifications
Main Features
A compact yet flexible test set for most common discrete semiconductor devices, including diodes (junction and Schottky), LEDs, zeners, diacs, bipolar
junction transistors (BJTs), Mosfets, SCRs and thyristors (including Triacs).
Based on a PIC16F877A microcontroller, with device and test selection, plus
the test results, displayed via a 16x2 alphanumeric LCD readout. Devices to
be tested are connected to the test set via an 18-way ZIF socket.
Five test voltages are available: a 600V source for avalanche breakdown
(BV) testing plus a choice of either 10V, 25V, 50V or 100V for operating voltage (OPV) tests. All test voltages are applied to the DUT via current limiting
resistors – 100kΩ in the case of BV tests or 2kΩ in the case of OPV tests.
Maximum avalanche current which can flow during BV tests is 6mA (short
circuit current).
Maximum device/leakage current which can flow with OPV = 100V is 30mA;
with OPV = 50V is 25mA; with OPV = 25V is 12.5mA; and with OPV = 10V
is 6mA.
Minimum leakage current which can be measured = 1μA.
Diode tests
(1) Reverse avalanche current IR (BV)
(2) Reverse leakage current IR (OPV)
(3) Forward voltage drop VF (OPV)
(4) Zener/avalanche voltage VR (BV)
LED tests
(1) Reverse leakage current IR (OPV = 10V)
(2) Forward voltage drop VF (OPV)
BJT tests
(1) Breakdown voltage C-B with emitter o/c V(BR)CBO
(2) Breakdown voltage C-E with base o/c V(BR)CEO
(3) Leakage current C-B with emitter o/c ICBO (OPV)
(4) Leakage current C-E with base o/c ICEO (OPV)
(5) Forward current gain hFE with a choice of three base current levels: 20μA,
100μA or 500μA
Maximum hFE which can be measured with IB = 20μA is 1500 (OPV = 100V)
Maximum hFE which can be measured with IB = 100μA is 300 (OPV = 100V)
Maximum hFE which can be measured with IB = 500μA is 60 (OPV = 100V)
Mosfet tests
(1) Breakdown voltage D-S with G-S shorted V(BR)DSS
(2) Leakage current D-S with G-S shorted IDSS (OPV)
(3) D-S current IDS versus G-S bias voltage VGS (ie, gm)
SCR, PUT & Triac tests
(1) Breakdown voltage with G-K (SCR) or G-A (PUT) shorted V(BR)AKS
(2) Leakage current with G-K (SCR) or G-A (PUT) shorted IAKS (OPV)
(3) Current IAKS with gate current applied (20μA, 100μA or 500μA) and
OPV applied
(4) Voltage drop A-K when conducting VAK (OPV)
Note: the test set operates from an external power source of 12V DC. Current
drain varies from around 65mA when a test is being set up, to a maximum of
approximately 900mA during testing. It can therefore be powered from either a
12V SLA battery or a 12V/1A mains power supply or regulated DC plugpack.
March 2012 71
12V DC
INPUT
POWER
D1 1N4004
REG1 7805
+11.4V
K
A
+
–
S1
IN
RELAY1
1000 F
25V
CON1
1000 F
25V
+5V
OUT
GND
100nF
68
IC5 PIN18
+11.4V
D2 UF4007
A
5W
80T
6
7
8
Vcc
Ips
DrC
10T
SwC
IC1
MC34063
Ct
TP4
SwE
Cin5
GND
4
1nF
K
+OPV/+BV
T1
0.27
3
33k
1W
1.5k 5W
1
C
B
Q1
BC337
E
2
E
2.2k
B
C
470nF
630V
390k
75k
1%
100k
390k
75k
1%
100k
100
G
470nF
630V
S
Q2
BC327
390k
75k
1%
390k
SET TEST
VOLTS
VR1
50k (25T)
+1.25V
100k
RELAY
2b
TPG
ZD1
4.7V
TPG
47 F
450V
100k
K
100k
1%
680 1% 12k 1%
5.1k 1%
1.0k
1W
75k
1%
D
Q3
IRF540N
1.0k
47 F 1W
450V
TPVdev
+Vdevice
30 1% 3.9k 1%
A
25V
+11.4V
RELAY 2a
50V
10V
100V
SET OP TEST VOLTS
S2a
680
1%
S2b
S2c
600V
CON3
+11.4V
7
+Vdevice
6
WARNING!
HIGH VOLTAGES (UP TO 600V DC) CAN BE PRESENT AT THE
OUTPUT OF THE DC -DC CONVERTER WHEN THIS CIRCUIT IS
OPERATING AND FOR SOME TIME ACROSS THE 47 µF 450V
CAPACITORS AFTER SWITCH-OFF
SC
2012
SEMTEST DISCRETE SEMICONDUCTOR TEST SET
CONNECTS TO CON6
ON UPPER BOARD
1
Vgs
2
3
Idevice
11
13
14
12
10
4,5,8,9
15
16
+11.4V
MAIN CIRCUIT (LOWER BOARD)
Fig.5: the main part of the SemTest circuit is built on the lower PCB and includes microcontroller IC4, the power
supplies and metering. IC4 controls the relays via IC5 & IC6, performs A-D conversion of the measurements applied to
its inputs and drives the LCD on the upper board via CON2. The test voltages (up to 600V) are generated by a DC-DC
converter circuit based on IC1, transformer T1 and Mosfet Q3 at upper left.
72 Silicon Chip
siliconchip.com.au
+5V
1,14
300k
1%
33k
1W
1.6k
1%
160k 1%
Vdd
1
2.4k
1%
6
300k
1%
11
RELAY 8
2
7,8
2
ADJ
1
4
RE1
AN2/RA2
RE0
RC0
RC1
RC2
3.0k
RC3
7
+5V
K
D9
1k
Idevice
RS
1
8
EN
3
15
D7
2
16
D6
4
17
D5
6
18
D4
39
RB5
4
3
RB4
RB3
AN1/RA1
RB2
560
RB0
RELAY 7
1,14
6
RB1
+11.4V
2
7,8
1 1B
1C 18
39
2 2B
2C 17
38
3 3B
3C 16 RLY5 COIL
6
37
4 4B
4C 15 RLY3 COIL
4
36
5 5B
5C 14 RLY4 COIL
2
35
6 6B
6C 13 RLY16 COIL
1
33
7 7B
7C 12 RLY15 COIL
3
34
8 8B
9
18 1C
1B 1
22
17 2C
2B 2
21
RELAY 12 COIL
16 3C
3B 3
27
RELAY 14 COIL
15 4C
4B 4
28
RELAY 13 COIL
14 5C
5B 5
29
13 6C
6B 6
30
12 7C
7B 7
19
11 8C
8B 8
20
RELAY 8 COIL
10 COM
E
9
RD3
RC4
RD2
RC5
RD4
RC6
RD5
RC7
RD6
RE2
RD7
OSC2
RD0
OSC1
RD1
Vss
12
A
A
siliconchip.com.au
E
12
S3
14
S5
16
25
S6
15
26
S4
13
S7
10
10
14
13
27pF
B
K
–
+
ADJ
E
9
7805
D
GND
IN
G
C
8
LED1
27pF
BC327, BC337
1N4004, UF4007
RELAY 6 COIL
X1
8.0MHz
IRF540N
A
11
23
31
LM336Z–2.5
K
K
5
24
Vss
D3-D4, D9: 1N4148
ZD1, ZD2
7
8C 11 RLY9 COIL
COM 10
5x
10k
RELAY 10 COIL
RELAY 2 COIL
CON4
+5V
IC6 ULN2803A
RELAY 11 COIL
+11.4V
A = 1.205
3.0k
IC5
PIN17
10
40
56
10k
8
9
IC5 ULN2803A
RB6
7
IC3b
7
9
RA4
RA5
RB7
6
CON2
5
+5V
RELAY 7 COIL
5
10nF
VR2
10k (10T)
RELAY 1 COIL
IC3: LM358
A
A
SET 2.49V
REFERENCE
D4
IC4
PIC16F877A
Vgs
K
–
TPG
A
6
2.7M
D3
+
IC7
LM336Z
–2.5
560
A = 1.205
470k
A
AN0/RA0
56
2x
10k
+2.49V
5
K
IC3a
2
10nF
10k
Vref+
MCLR
8
3
20k
K
ZD2
6.2V
1W
100 F
100nF
TP1
IC6
PIN11
+5V
32
Vdd
100nF
22
1%
+11.4V
2.4k
100nF
2.2k
CONNECTS TO CON5
ON UPPER BOARD
300k
1%
33k
1W
47 F
CONNECTS TO CON7 ON UPPER BOARD
240k 1%
D
S
GND
OUT
March 2012 73
+11.4V
+5.0V
RELAY 9
220 F
CON5
RELAY 15
5
7
1
4
2
15
Vdd
B-L A
RS
16 x 2 LCD MODULE
3
CONNECTS
TO CON2
ON MAIN
BOARD
RELAY 16
22
6
CONTRAST
3
VR11
10k
LCD
CONTRAST
CON7
3
EN
D7 D6 D5 D4 D3 D2 D1 D0 GND
1
14 13 12 11 10 9 8 7
2
R/W
5
1
B-L K
16
7
4
6
14
8
13
9
16
15
10
10
S3
S5
TEST
100nF
D5
12
ADJ
–
VR3
10k
4.7k
4.7k
1%
LED1
68k 1%
9
A
K
SET +500 A
1k
A
56k 1%
2
K
+8.75V (TP+ –2.49V)
3
+2.49V
IC2a
1
E
1k
B
A
6
IC2b
7
1k
B
–
VR4
10k
A
K
120k
1%
4.7k
1%
RELAY 5
RELAY3b
6
2
14
–Ibias
1
7
2
6
RELAY 3a
SET –100 A
68k 1%
4.7k
8
4
RELAY6
VR7 5k
6
7,8
+Ibias
Q5
BC549
56k 1%
D8
TPG
C
E
4
K
ADJ
Q4
BC559
100
C
VR6 5k
SET +100 A
100
5
D7
+
8
IC2: LM358
6.8k
TP3
RELAY 4b
120k
1%
5
TEST
VOLTS
ON
VR5 5k
D6
TP2
620
K
+
11
S7
S6
+11.4V
A
IC9
LM336Z
2.5
S4
ENTER
+11.4V
TP+
IC8
LM336Z
2.5
DOWN
UP
CONNECTS TO CON4 ON MAIN BOARD
MENU
2
+/–Ibias
SET –500 A
VR8 5k
RELAY 4a
620
SC
2012
SEMTEST DISCRETE SEMICONDUCTOR TEST SET
UPPER BOARD CIRCUIT
Fig.6: the upper board circuit carries the LCD module, an 18-pin ZIF (zero insertion force) socket to connect the device
under test (DUT), the control pushbuttons and various relays to switch the device connections to CON6.
to adjust the value of the current
limiting resistance in series with the
converter’s output, to suit the various
output voltage levels. So for the four
output voltage settings selected by S2a,
the total current limiting resistance is
(1.5kΩ + (500Ω//99kΩ)), or just under
2kΩ. This limits the device current to
74 Silicon Chip
about 50mA on the 100V range.
On the “BV” setting (relay 2 off), the
current limiting resistance jumps up
to 100.5kΩ – limiting the maximum
current to less than 6mA even if the
device under test is shorted.
Crystal X1 and its two associated
27pF capacitors are used to run the
micro at 8MHz, which gives an instruction cycle time of 500ns.
Analog-to-digital conversion
Now let’s turn to the micro’s ADC
module and how it’s used to perform
the SemTest’s various metering functions. Starting with the ADC’s input
siliconchip.com.au
+11.4V
RELAY 9
RELAY 16
RELAY 15
RELAY 14
10k 1W
K
ZD3
12V
1W
10k 1W
K
VR10b
10k
VR10a
10k
A
A
ZD4
12V
1W
68
10k
1W
+11.4V
10k
1W
+Vdevice
RELAY 14
Vgs
22
G
2
17
K
D
3
16
A
G
4
15
G
S
5
14
K
6
13
C
K
7
12
8
11
A
9
10
K
E
RELAY 15
+/– Ibias
S
E
Vgs
18
G
B
RELAY 10
18-PIN ZIF
SOCKET
1
Idevice
+Vdevice
RELAY 12
Idevice
RELAY 16
SCRs & PUTs
MOSFETS
1M
+Vdevice
RELAY 13
A
BIPOLAR JUNCTION
TRANSISTORS
DIODES & LEDS
RELAY 9
RELAY 11
RELAY 14
+/– Ibias
+Vdevice
68
RELAY 13
RELAY 10
+11.4V
RELAY 12
RELAY 11
12 10 14 13 11
Idevice
16 15
1
2
3
4
5
6
7
8
9
CON6
CONNECTS TO CON3 ON MAIN BOARD
LED
D5–D8: 1N4148
A
K
ZD3, ZD4
A
K
K
A
BC549, BC559
LM336Z–2.5
B
–
+
ADJ
E
C
WARNING: SHOCK HAZARD!
The DC-DC step-up converter used in this project can generate high voltages – up to 600V DC – and can also supply significant
current (tens of milliamps). As a result, it’s capable of delivering a nasty electric shock and there are some situations where
such a shock could be potentially lethal.
For this reason, DO NOT touch any part of the circuit while it is operating, particularly around transformer T1, diode D1 and the
two 47μF 450V electrolytic capacitors on the main circuit (lower board). Note, however, that high voltages can also be applied
to the display board (via CON6) during operation, so it’s not safe to touch certain parts on this board either.
Provided the unit is built and fully-enclosed in a case as described, it’s safe to operate. Exercise extreme caution if testing
the unit with the lid opened and always allow time for the 47μF capacitors to discharge before working on the circuit.
siliconchip.com.au
March 2012 75
This view inside the completed prototype shows how it all goes together. The two PCB assemblies are mounted in
their respective case halves on spacers and joined together via three IDC header cables.
channel AN0 (IC4 pin 2), this is used
to measure the voltage VDEV being applied to the device under test. Relay 8
is used to switch the upper leg of the
voltage divider feeding AN0 to give the
VDEV voltmeter two ranges: 0-1028V
in the case of the higher “breakdown
voltage” or BV range; and 0-102.8V for
the lower “OPV” voltage range.
The second ADC input channel
AN1 (IC4 pin 3) is used to measure
the current I DEV passing through
the device under test (DUT). It does
this by measuring the voltage drop
across a shunt resistance connected
between the negative end of the DUT
and ground. Here, relay 7 is used to
switch the value of the shunt resistor,
76 Silicon Chip
to provide two current ranges.
When relay 7 is activated, it shorts
the bottom end of the 39Ω “upper”
shunt resistor to ground, giving an
effective shunt resistance of 39Ω; this
provides a 0-50mA current range.
However, if the micro turns off relay
7, this removes the short across the
paralleled 2.7MΩ and 10kΩ resistors, bumping up the effective shunt
resistance to almost exactly 10kΩ and
providing a 0-200µA current range.
On both ranges, the voltage drop developed across the shunt resistance is
fed to the micro’s AN1 input via buffer
amplifier IC3b, which provides a gain
of 1.205. This is used for scaling.
The third ADC input channel, AN2
(IC4 pin 4), is used to measure VGS,
the gate-source voltage for Mosfets. It
does this by using another input voltage divider, with the top leg formed by
the series 470kΩ and 20kΩ resistors,
and the bottom leg by the 10kΩ resistor
from pin 3 of IC3a to ground.
This gives a 50:1 input division,
which together with the gain of buffer
amplifier IC3a (again 1.205) gives a
voltage range of 0-103.3V. This may
seem too high for measuring voltages
lower than 20V but it was only possible to give the AN2 voltmeter a single range and this needs to measure
voltages up to around 100V to cope
with VGS measurements on P-channel
devices (where the effective VGS must
siliconchip.com.au
Parts List
1 ABS enclosure, 222 x 146 x
55mm (Jaycar HB-6130 or
similar)
2 control knobs, 19mm diameter
5 SPST pushbutton switches,
panel-mount (Altronics S1084,
Jaycar SP-0700)
1 18-pin ZIF socket (Altronics
P0590, Jaycar PI-6480)
1 18-pin machined IC socket
1 18-pin IC socket, wire-wrap type
4 M3 x 15mm tapped metal
spacers
2 M3 x 6mm M3 tapped Nylon
spacers
4 M3 x 25mm machine screws
2 M3 x 15mm machine screws
10 M3 x 6mm machine screws
10 M3 hex nuts
2 M3 flat washers, Nylon
4 16-way (8x2) IDC header sockets
2 10-way (5x2) IDC header sockets
4 16-way (8x2) pin headers, vertical PCB-mount
2 10-way (5x2) pin headers, vertical PCB-mount
1 300mm length of 16-way IDC
ribbon cable
1 180mm length of 10-way IDC
ribbon cable
1 16-way length of SIL pin header
strip
Main board
1 PCB, code 04103121, 210 x
134mm
2 19mm square heatsinks (Altronics H 0630, Jaycar HH-8502)
1 6V SPDT mini relay (Jaycar
SY-4058)
1 12V DPDT mini relay (Altronics
S4150)
2 SPST mini DIL relay (Altronics
S4101A)
1 Ferrite pot core, 25mm dia x
16mm high (Altronics L5300 or
similar)
1 moulded bobbin to suit (L 5305)
1 M3 x 25mm Nylon machine
screw plus nut and washer
be found by subtracting the actual VGS
from the device voltage VDEV).
ADC reference voltage
The ADC reference voltage for all
three of these measuring ranges is
siliconchip.com.au
1 3-pole 4-position rotary switch
1 SPDT sub mini toggle switch,
PCB-mount (Altronics S 1320)
1 8.0MHz crystal, HC-49S (X1)
2 8-pin DIL IC sockets, PCB-mount
1 40-pin DIL IC socket, PCB-mount
1 2.1mm concentric DC connector,
PCB-mount (Altronics P 0620)
2 Nylon cable ties
4 1mm PCB terminal pins
1 50kΩ multi-turn vertical trimpot
(VR1)
1 10kΩ multi-turn horizontal trimpot
(VR2)
1 1m length of 0.8mm-diameter
enamelled copper wire
1 10m length of 0.25mm-diameter
enamelled copper wire
Semiconductors
1 MC34063 switchmode controller
(IC1)
1 LM358 dual op amp (IC3)
1 PIC16F877A microcontroller (IC4)
2 ULN2803A octal driver (IC5,IC6)
1 LM336Z-2.5 voltage reference
(IC7)
1 7805 5V regulator (REG1)
1 BC337 NPN transistor (Q1)
1 BC327 PNP transistor (Q2)
1 IRF540N N-channel Mosfet (Q3)
1 4.7V 1W zener diode (ZD1)
1 6.2V 1W zener diode (ZD2)
1 1N4004 1A diode (D1)
1 UF4007 fast 1A diode (D2)
3 1N4148 100mA diode (D3,D4,D9)
Capacitors
2 1000µF 25V RB electrolytic
1 100µF 10V RB electrolytic
2 47µF 450V RB electrolytic
1 47µF 16V RB electrolytic
2 470nF 630V MKT capacitor
4 100nF MKT capacitor
2 10nF MKT capacitor
1 1nF MKT or polyester capacitor
2 27pF NP0 ceramic
Resistors (0.25W, 1%)
1 2.7MΩ
2 2.4kΩ
1 470kΩ
1 2.2kΩ
4 390kΩ
1 1.6kΩ
provided at pin 5 of IC4, by the voltage
reference circuit based on IC7, trimpot
VR2 and diodes D3 & D4, together with
a 2.4kΩ load resistor. During set-up,
VR2 is adjusted to bring the reference
voltage across IC7 as close as possible
3 300kΩ
1 240kΩ
1 160kΩ
5 100kΩ
4 75kΩ
3 33kΩ 1W
1 20kΩ
1 12kΩ
9 10kΩ
1 5.1kΩ
1 3.9kΩ
2 3.0kΩ
1 1.5kΩ 5W
1 1kΩ
2 1kΩ 1W
2 680Ω
2 560Ω
1 100Ω
1 68Ω
2 56Ω
1 39Ω
1 30Ω
1 22Ω
1 0.27Ω 5W
Upper (Display) board
1 PCB, code 04103122, 200 x
124mm
1 16x2 LCD module (Altronics
Z 7013; Jaycar QP-5512)
2 6V SPDT mini relays (Jaycar
SY-4058)
8 12V DPDT mini relays (Altronics
S4150)
2 SPST mini DIL relay (Altronics
S4101A)
1 8-pin DIL IC socket
4 1mm PCB terminal pins
1 10kΩ mini horizontal trimpot
2 10kΩ multi-turn horizontal trimpot
1 10kΩ linear 16mm dual-gang pot
4 5kΩ multi-turn horizontal trimpot
Semiconductors
1 LM358 dual op amp (IC2)
2 LM336Z-2.5 (IC8,IC9)
1 BC559 PNP transistor (Q4)
1 BC549 NPN transistor (Q5)
2 12V 1W zener diodes (ZD3,ZD4)
1 5mm red LED (LED1)
4 1N4148 100mA diode (D5-D8)
Capacitors
1 220µF 10V RB electrolytic
1 100nF MKT capacitor
Resistors (0.25W, 1%)
1 1MΩ
2 2.2kΩ
2 120kΩ
3 1kΩ
2 68kΩ
2 620Ω
2 56kΩ
2 100Ω
4 10kΩ 1W 2 68Ω
1 6.8kΩ
1 22Ω
4 4.7kΩ
to 2.490V, where it has a temperature
coefficient that’s very close to zero.
All three ADC input circuits have
been designed to give the most accurate readings with this reference
voltage, so this one adjustment perMarch 2012 77
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78 Silicon Chip
forms the instrument’s basic metering
calibration.
That’s just about it for the main PCB
circuitry. However, before moving on,
we should point out that the complete
instrument runs from an external
12V DC supply which comes in via
CON1, polarity protection diode D1
and power switch S1. The resulting
+11.4V rail then feeds regulator REG1
(a 7805), which provides +5V to power
IC3, IC4, the LCD module and their
associated circuitry.
The +11.4V rail itself is also used
to supply the various relays and the
DC-DC converter based on IC1 – when
the micro turns on relay 1 to begin a
test. It’s also used to power the IBIAS
circuitry on the upper PCB, as we shall
see in a moment.
Incidentally, the overall current
drain of the SemTest from the external
12V supply ranges from around 65mA
when a test is being set up to between
150mA and 900mA during testing
(depending on the test concerned). A
regulated 12V/1A plugpack supply or
a 12V SLA battery would be suitable.
The upper (display) PCB
Now we can turn our attention to
the circuitry on the upper display PCB
– see Fig.6. This has the LCD module
and control pushbutton switch area
at upper left. Trimpot VR11 is used to
set the LCD’s contrast for maximum
readability and the four data lines
(D4-D7) and two control lines (EN and
RS) are fed from various pins on CON5
and linked back to CON2 on the main
board. Similarly, the five pushbutton
switches S3-S7 are simply wired to
CON7, which is linked to CON4 on the
main board and then to pins 23-26 &
10 of microcontroller IC4, so the micro
can monitor them.
At lower left in Fig.6 are two programmable current sources, used to
provide the base current IBIAS for testing BJTs as well as the gate current for
testing SCRs and PUTs. IC8, a 2.490V
reference, together with op amp IC2a
and PNP transistor Q4, is the positive
IBIAS source. Similarly, voltage reference IC9, IC2b and NPN transistor Q5
is the negative IBIAS source (or “sink”,
if you prefer).
The 2.490V voltage references (IC8
or IC9) are connected to the non-inverting input of their respective op amps,
ie, IC2a or IC2b. The output of each op
amp drives the base of the current pass
transistor (Q4 or Q5), while feedback
to the inverting input of each op amp
is taken from the emitter of its pass
transistor. Then the emitter of each
transistor is taken either to the +11.4V
rail (in the case of Q4) or to ground (in
the case of Q5), via a series resistance
whose value is carefully chosen to
have a voltage drop of 2.490V when
the transistor’s emitter current is at
the desired level.
For example, when relays 3 and 4
are both off, the emitter resistances for
Q4 and Q5 are both equal at 124.7kΩ
(120kΩ + 4.7kΩ). As a result, the current passed by either transistor will
tend to stabilise at 20µA, ie, the level
which results in a voltage drop of
2.490V across its emitter resistance.
Relays 3 & 4 are used to switch in
different values of emitter resistance
for transistors Q4 and Q5, to change the
operating currents. For example when
relay 3 is energised by the micro, the
68kΩ and 56kΩ resistors plus trimpot
VR6 (or VR7) are switched in parallel
with the fixed emitter resistors, changing the current level of each source to
100µA.
Similarly, when relay 4 is energised,
the combinations of 4.7kΩ and 620Ω
resistors plus trimpot VR5 (or VR8)
are switched in parallel with the fixed
emitter resistors, changing the current
level of each source to 500μA. So that’s
how we program the IBIAS current
sources for currents of either 20µA,
100µA or 500µA.
Relays 5 & 6 are used to switch
the output of either the upper +IBIAS
source or the lower -IBIAS source, to
the device test circuitry. By the way,
when either relay 5 or relay 6 (or both)
are off, the current sources obviously
can’t provide any of the three preset
current levels. The op amp comparators simply bias their pass transistors
“hard on”, ready to pass the appropriate current when current is able
to flow.
That covers pretty well all of the
circuitry on the lefthand side of Fig.6,
apart from LED1, the “Test Volts On”
indicator. This is connected between
pin 9 of CON7 and ground, via a series
1kΩ resistor. If you refer back to Fig.5,
you’ll see that the LED is connected
to the +11.4V rail whenever relay
1 switches on the DC-DC converter
circuitry, to perform a test.
ZIF socket
In the centre of the righthand side of
Fig.6 you’ll see the 18-pin ZIF socket
siliconchip.com.au
that’s used to connect the various types
of discrete semiconductor device to
the SemTest. The socket’s pin clips
are divided into four groups: four for
BJTs at lower left, five for Mosfets at
upper left, five for SCRs and PUTs at
upper right and the remaining four for
diodes and LEDs at lower right.
You’ll also note that within each
device group there are some clips
connected together; this has been
done to provide for as many pin-out
configurations as possible, for each
type of device.
Upper board relays
Shown around the ZIF socket are
the various relays used to set up the
connections for each device type:
relay 9 for diodes and LEDs, relays 10
& 11 for BJTs, relays 12, 13 & 14 for
Mosfets and relays 15 & 16 for SCRs
and PUTs. If you want to trace out the
four separate relay circuits you will
find this easier by referring back to the
simplified circuits given in Figs.1-4 in
the first article.
The only other part of the circuitry
on the righthand side of Fig.6 is that
at top centre, associated with zener
diodes ZD3 and ZD4 and pots VR10a
and VR10b. These are used to adjust
the gate bias voltage, VGS, for Mosfets,
which was also shown in Fig.3 of the
first article.
VR10a is used to adjust the positive VGS for N-channel Mosfets, while
VR10b is used to adjust the “negative”
VGS for P-channel Mosfets.
In operation, the microcontroller
Another view inside the prototype SemTest. The full assembly details will
be described in Pt.3 next month.
works out the effective VGS for the
latter devices by subtracting the actual
voltage at VR10b’s wiper from the device voltage VDEV (which in this case
corresponds to the source voltage).
That completes the circuit description. Next month, we will present the
SC
construction details.
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